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For Cu deposited in trenches (Figure 18), the <112> directions are parallel to SD. In this case, the <110> directions are parallel to the LD and the {111}<110> oriented grains grow preferably during annealing, resulting in the {111}<110> annealing texture [44]. Similarly, the grain growth rate in the trench, where the AMSD is parallel to LD, is dominant, and the {111}<112> annealing texture is obtained [44]. 08 476 Figure 26. Strain energy density and maximum stress distributions and maximum stress directions (from left) in Cu deposited in and over damascene trench with a = 100 nm and b = 200 nm in Figure 18 [44].

Recrystallization and Related Annealing Phenomena. Pergamon Press; 1995. [13] Park H, Lee DN. The evolution of annealing textures in 90 pct drawn copper wire. Metallurgical and Materials Transactions 2003;34A 531-541. [14] Shvindlerman LS, Gottstein G, Molodov DA, Sursaeva VG. Triple junction motion in metals. ), Recrystallization and Grain Growth: pro‐ ceedings of The First Joint International Conference on Recrystallization and Grain Growth. RWTH Aachen, Germany: Springer-Verlag; 2001. [15] Porter DA, Eastering KE.

Plan-view EBSD maps of surface of Cu-plated 500 nm/500 nm width/space patterned trenches as a function of time at room temperature following electrodeposition. Black area in EBSD maps is low pattern-quality region. (Left below EBSD maps) Plane-view EBSD map superimposed on corresponding SEM micrograph. a stands for blanket area. Green and blue (light and dark in black-and-white figure) areas in EBSD maps indicate <110>//ND and <111>//ND oriented regions, respectively [41]. 1 {111}  110   111  //ND {115}  552  {115}  721  width / space {111}  112  Figure 20.

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